.net pdf 417

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You can think of a bipolar transistor as two diodes in reverse series. You can t normally connect two diodes together this way and get a good transistor, but the analogy is good for

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C 2 places the gate at signal ground. In some common gate circuits, the gate is directly grounded, and R2 and C 2 are not necessary. The output signal leaves the circuit through C3. Resistor R3 keeps the output signal from being shorted through the power supply. The common gate arrangement produces less gain than its common source counterpart. But a common gate amplifier is not likely to break into unwanted oscillation, making it a good choice for power-amplifier circuits, especially at RF. The output is in phase with the input.

402 The bipolar transistor modeling the behavior of bipolar transistors, so that their operation is easier to understand. A dual-diode NPN transistor model is shown in Fig. 22-3. The base is formed by the connection of the two diode anodes. The emitter is one of the cathodes, and the collector is the other.

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Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com) Copyright 2004 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website.

A common drain circuit is shown in Fig. 23-13. In this circuit, the collector is at signal ground. It is sometimes called a source follower. The FET is biased in the same way as for the common source and common gate circuits. In the illustration, an N-channel JFET is shown, but any other kind of FET could be used, reversing the polarity for P-channel devices. Enhancement-mode MOSFETs would need a resistor between the gate and the positive supply terminal (or the negative terminal if the MOSFET is P-channel). The input signal passes through C 2 to the gate. Resistors R1 and R2 provide gate bias. Resistor R3 limits the current. Capacitor C3 keeps the drain at signal ground. Fluctuating dc (the channel current) flows through R1 as a result of the input signal; this causes a fluctuating dc voltage to appear across R1. The output is taken from the source, and its ac component passes through C1. The output of the common drain circuit is in phase with the input. This scheme is the FET analog of the bipolar common collector arrangement. The output impedance is rather low, making this circuit a good choice for broadband impedance matching.

The normal method of biasing an NPN transistor is to have the emitter negative and the collector positive. This is shown by the connection of the battery in Fig. 22-3. Typical voltages for this battery (although it might be, and often is, a dc power supply) range from 3 V to about 50 V. Most often, 6 V, 9 V, or 12 V supplies are used. The base is labeled control in the figure. This is because the flow of current through the transistor depends critically on the base bias voltage, EB, relative to the emitter-collector bias voltage, EC.

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Suppose that the base isn t connected to anything, or is at the same potential as the emitter. This is zero base bias, sometimes simply called zero bias. How much current will flow through the transistor What will the milliammeter (mA) show The answer is that there will be no current. The meter will register zero. Recall the discussion of diode behavior from the previous chapter. No current flows through a P-N junction unless the forward bias is at least equal to the forward breakover

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