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Now imagine that another battery is connected to the base at the point marked control, so that EB is negative with respect to the emitter. What will happen Will current flow through the transistor The answer is no. The addition of this new battery will cause the emitter-base (E-B) junction to be reverse-biased. It is assumed that this new battery is not of such a high voltage that avalanche breakdown takes place at the junction. A signal might be injected to overcome the reverse-bias battery and the forward breakover voltage of the E-B junction, but such a signal would have to be of a high, positive voltage.

Characteristic curves for JFETs generally show (a) drain voltage as a function of source current (b) drain current as a function of gate current (c) drain current as a function of drain voltage (d) drain voltage as a function of gate current 12 A disadvantage of MOS components is the fact that (a) they can be easily damaged by static electricity (b) they need a high input voltage in order to amplify (c) they draw large amounts of current (d) they produce a great deal of heat 13 The input impedance of a MOSFET is (a) lower than that of a JFET (b) lower than that of a bipolar transistor (c) between that of a bipolar transistor and a JFET (d) extremely high 14 A significant difference between MOSFETs and JFETs is the fact that (a) MOSFETs can handle a wider range of gate bias voltages.

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Downloaded from Digital Engineering Library @ McGraw-Hill (www.digitalengineeringlibrary.com) Copyright 2004 The McGraw-Hill Companies. All rights reserved. Any use is subject to the Terms of Use as given at the website.

Now suppose that EB is made positive, starting at small voltages and gradually increasing. If this forward bias is less than the forward breakover voltage, no current will flow. But as the base voltage EB reaches breakover, the E-B junction will start to conduct. The base-collector (B-C) junction will remain reverse-biased as long as EB is less than the supply voltage (in this case 12 V). In practical transistor circuits, it is common for EB to be set at a fraction of the supply voltage. Despite the reverse bias of the B-C junction, the emitter-collector current, called collector current and denoted IC, will flow once the E-B junction conducts. In a real transistor (Fig. 22-3B), the meter reading will jump when the forward breakover voltage of the E-B junction is reached. Then even a small rise in EB, attended by a rise in IB, will cause a big increase in IC. This is shown graphically in Fig. 22-4.

(b) MOSFETs can deliver greater output power (c) MOSFETs are more rugged (d) MOSFETs last longer..

7

If EB continues to rise, a point will eventually be reached where IC increases less rapidly. Ultimately, the IC vs. EB curve will level off. The transistor is then saturated or in saturation. It is conducting as much as it possibly can; it s wide open. This property of three-layer semiconductors, in which reverse-biased junctions can sometimes pass current, was first noticed in the late forties by the engineers Bardeen, Brattain, and Shockley at the Bell Laboratories. When they saw how current variations were magnified by a three-layer device of this kind, they knew they were on to something. They envisioned that the effect could be exploited to amplify weak signals, or to use small currents to switch much larger ones. They must have been excited, but they surely had no idea how much their discovery would affect the world.

15. The channel in a zero-biased JFET is normally (a) pinched off. (b) in a state of avalanche breakdown. (c) in a conducting state. (d) made of P-type semiconductor material. 16. When an enhancement-mode MOSFET is at zero bias, (a) the drain current is high with no signal. (b) the drain current fluctuates with no signal. (c) the drain current is low with no signal. (d) the drain current is zero with no signal. 17. An enhancement-mode MOSFET can be recognized in schematic diagrams by the presence of (a) an arrow pointing inward. (b) a broken vertical line inside the circle. (c) an arrow pointing outward. (d) a solid vertical line inside the circle. 18. In a source follower, which of the electrodes receives the input signal (a) Any of them (doesn t matter) (b) The source (c) The gate (d) The drain 19. Which of the following circuits produces an output signal wave that is 180 out of phase with the input signal wave (a) The common source circuit (b) The common gate circuit (c) The common drain circuit (d) All of the above 20. Which of the following circuits can produce the greatest signal gain (amplification factor) (a) The common source circuit (b) The common gate circuit (c) The common drain circuit (d) All of the above circuits can amplify to the same extent.

22-4 Relative collector current (IC) as a function of base voltage (EB) for a hypothetical silicon transistor.

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